CY7C1382D-200AXC

CY7C1382D-167AXC

IC SRAM 512KX36 3.3V SYN 100TQFP

CY7C1382D

The CY7C1380D/CY7C1382D SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs of CY7C1380D/CY7C1382Dare gated by registers controll...

CY7C1382CV25

The Cypress Synchronous Burst SRAM CY7C1382CV25family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.

CY7C1382C

CY7C1382BV25

The Cypress Synchronous Burst SRAM CY7C1382BV25 and CY7C1380BV25 family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.The CY7C1382BV25 and CY7C1...

CY7C1382B

The Cypress Synchronous Burst SRAM CY7C1380B and CY7C1382Bfamily employs high-speed, low-power CMOS designs using advanced single- layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.The CY7C1380B and CY7C1382B SRAM...