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Part Number: CY7C1399

 

 

 

 

Description: The CY7C1399 is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memo...


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CY7C1399 General Description


The CY7C1399 is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

An active LOW Write Enable signal (WE) controls the writing/ reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins is present on the eight data input/output pins.

The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. The CY7C1399 is available in 28-pin standard 300-mil-wide SOJ and TSOP Type I packages.

CY7C1399 Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1] ....................................0.5V to VCC + 0.5V
DC Input Voltage[1].................................0.5V to VCC + 0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA

CY7C1399 Features

• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed
   -12/15 ns
• Low active power
   -255 mW (max.)
• Low CMOS standby power (L)
   -180 mW (max.), f=fMAX
• 2.0V data retention (L)
   -40 mW
• Low-power alpha immune 6T cell
• Plastic SOJ and TSOP packaging

CY7C1399 Connection Diagram

CY7C1399  Connection Diagram

CY7C1399 datasheet

CY7C1399
PDF/DataSheet Download

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