CY7C1512

Features: • High speed -tAA = 15 ns• CMOS for optimum speed/power• Low active power -770 mW• Low standby power -28 mW• Automatic power-down when deselected• TTL-compatible inputs and outputs• Easy memory expansion with CE1, CE2, andOE optionsPinoutSpecific...

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CY7C1512 Picture
SeekIC No. : 004320201 Detail

CY7C1512: Features: • High speed -tAA = 15 ns• CMOS for optimum speed/power• Low active power -770 mW• Low standby power -28 mW• Automatic power-down when deselected• TTL-c...

floor Price/Ceiling Price

Part Number:
CY7C1512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• High speed
  -tAA = 15 ns
• CMOS for optimum speed/power
• Low active power
  -770 mW
• Low standby power
  -28 mW
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options



Pinout

  Connection Diagram


Specifications

Storage Temperature ................................. 65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................0.5V to VCC +0.5V
DC Input Voltage[1]..................................0.5V to VCC +0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MILSTD883, Method 3015)
Latch-Up Current..................................................... >200 mA



Description

The CY7C1512 is a high-performance CMOS static RAM organizedas 65,536 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. CY7C1512 has an automatic power- down feature that reduces power consumption by more than 75% when deselected.

Writing to the CY7C1512 is accomplished by taking chip enable one (CE1) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through /O7) is then written into the location pecified on the address ins (A0 through A15).

Reading from the CY7C1512 is accomplished by taking chip enable ne (CE1) and output enable (OE) LOW while forcing
write enable (WE) and chip enable two (CE2) HIGH. Under hese conditions, the contents of the memory location specified y the address pins will appear on the I/O pins.

The eight input/output pins (I/O0 through I/O7)of CY7C1512 are placed in a igh-impedance state when the device is deselected (CE1 IGH or CE2 LOW), the outputs are disabled (OE HIGH), or uring a write operation (CE1 LOW, CE2 HIGH, and WE LOW).

The CY7C1512 is available in standard TSOP type I and 50-mil-wide plastic SOIC packages.




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