Features: •Automatic power-down when deselected
•CMOS for optimum speed/power
•High speed-tAA = 15 ns
•Low active power-633 mW
•Low standby power-110 mW
•TTL-compatible inputs and outputs
•VIHof 2.2V
•Capable of withstanding greater than 2001V electrostat-ic dischargePinout
Specifications(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature ......................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 20 to Pin 10)...................................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State.......................................................−0.5V to +7.0V
DC Input Voltage...................................................−3.0V to +7.0V
DescriptionThe CY7C168A is a high-performance CMOS static RAM or-ganized as 4096 by 4 bits. Easy memory expansion is providedby an active LOW Chip Enable (CE ) and three-state drivers.The CY7C168A has an automatic power-down feature, reducing the power consum ption by 77% when deselected.
Writing to the CY7C168A is accomplished when the Chip Select(CE ) and Write Enable (WE ) inputs are both LOW. Data on the four data input/output pins (I/O0 through I/O3) is written into the memory location specified on the address pins (A0 throughA11)
Reading the CY7C168A is accomplished by taking the Chip Enable(CE ) LOW, while Write Enable (WE ) remains HIGH. Under these conditions, the contents of the location specified on the address pins will appear on the four data input/output pins(I/O0 through I/O3).
The input/output pins of CY7C168A remain in a high-impedance state when Chip Enable (CE ) is HIGH or Write Enable (WE ) is LOW.
A die coat is used to insure alpha immunity.
CY7C168A-25 Data Sheet
