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Part Number: CY7C182

 

MFG: SOP

 

D/C: 2005+

Description: The CY7C182 is a high-speed CMOS static RAM organized as 8,192 by 9 bits and it is manufactured using ...


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CY7C182 General Description


The CY7C182 is a high-speed CMOS static RAM organized as 8,192 by 9 bits and it is manufactured using Cypress's highperformance CMOS technology. Access times as fast as 25 ns are available with maximum power consumption of only 770 mW.

The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the circuit is deselected. Easy memory expansion is provided by an active-LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active-LOW Output Enable (OE), and threestate drivers.

An active-LOW Write Enable signal (WE) controls the writing/ reading operation of the memory. When CE1 and WE inputs are both LOW, data on the nine data input/output pins (I/O0 through I/O8) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the device is accomplished by selecting the device and enabling the outputs, (CE1 and OE active LOW and CE2 active HIGH), while (WE) remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins is present on the nine data input/output pins.

The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.

A die coat is used to insure alpha immunity.

CY7C182 Maximum Ratings

Storage Temperature .......................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential[1] ................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .................................................−0.5V to +7.0V
DC Input Voltage[1]..............................................−0.5V to +7.0V
Output Current into Outputs (LOW) ................................. 20 mA
Static Discharge Voltage ................................................ >2001V
(per MIL-STD-883, Method 3015.2)
Latch-Up Current.......................................................... >200 mA

CY7C182 Features

• High speed
  -tAA = 25 ns
• x9 organization is ideal for cache memory applications
• CMOS for optimum speed/power
• Low active power
  -770 mW
• Low standby power
  -195 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• Easy memory expansion with CE1, CE2OE options

CY7C182 Connection Diagram

CY7C182  Connection Diagram

CY7C182 datasheet

CY7C182
PDF/DataSheet Download

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