CY7C186

Features: High speed -20 nsLow active power -605 mWLow standby power -110 mWCMOS for optimum speed/powerEasy memory expansion with CE1, CE2, and OE featuresTTL-compatible inputs and outputsAutomatic power-down when deselectedPinoutSpecificationsStorage Temperature ...................................

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CY7C186 Picture
SeekIC No. : 004320240 Detail

CY7C186: Features: High speed -20 nsLow active power -605 mWLow standby power -110 mWCMOS for optimum speed/powerEasy memory expansion with CE1, CE2, and OE featuresTTL-compatible inputs and outputsAutomati...

floor Price/Ceiling Price

Part Number:
CY7C186
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

High speed
    -20 ns
Low active power 
    -605 mW
Low standby power
    -110 mW
CMOS for optimum speed/power
Easy memory expansion with CE1, CE2, and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected



Pinout

  Connection Diagram


Specifications

Storage Temperature .......................................................65°C to +150°C
Ambient Temperature with.Power Applied........................55°C to +125°C
Supply Voltage to Ground Potential .................................... 0.5V to +7.0V
DC Voltage Applied to Outputs.in High Z State[2] ............... 0.5V to +7.0V
DC Input Voltage[2] ........................................ ....................0.5V to +7.0V
Output Current into Outputs (LOW).................................................. 20 mA
Static Discharge Voltage ................................................................ >2001V
(per MIL-STD-883, Method 3015) Latch-Up Current.......................>200 mA



Description

The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion isprovided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80% when deselected. The CY7C186 is in a 600-mil-wide PDIP package and a 32-pin TSOP (std. pinout).

An active LOW write enable signal (WE) of CY7C186 controls the writing/ reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the CY7C186 is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.

The input/output pins of CY7C186 remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha immunity.




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