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Part Number: CY7C186

 

MFG: SOP

 

D/C: 2005+

Description: The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expan...


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CY7C186 General Description


The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion isprovided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80% when deselected. The CY7C186 is in a 600-mil-wide PDIP package and a 32-pin TSOP (std. pinout).

An active LOW write enable signal (WE) controls the writing/ reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the device is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.

The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha immunity.

CY7C186 Maximum Ratings

Storage Temperature .......................................................65°C to +150°C
Ambient Temperature with.Power Applied........................55°C to +125°C
Supply Voltage to Ground Potential .................................... 0.5V to +7.0V
DC Voltage Applied to Outputs.in High Z State[2] ............... 0.5V to +7.0V
DC Input Voltage[2] ........................................ ....................0.5V to +7.0V
Output Current into Outputs (LOW).................................................. 20 mA
Static Discharge Voltage ................................................................ >2001V
(per MIL-STD-883, Method 3015) Latch-Up Current.......................>200 mA

CY7C186 Features

High speed
    -20 ns
Low active power 
    -605 mW
Low standby power
    -110 mW
CMOS for optimum speed/power
Easy memory expansion with CE1, CE2, and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected

CY7C186 Connection Diagram

CY7C186  Connection Diagram

CY7C186 datasheet

CY7C186
PDF/DataSheet Download

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