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Part Number: CY7C197D
Description: The CY7C197D is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expan...
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CY7C197D
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General Description
CY7C197D General Description
The CY7C197D is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197D has an automatic power-down feature, reducing the power consumption when deselected.
Writing to the device is accomplished when the Chip Enable(CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17).
Reading the device is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin.
The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW.The CY7C197D is available in standard 24-Lead DIP and SOJ Pb-Free Packages.
CY7C197D Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,not tested.)
Storage Temperature ...........................−65°C to +150°C
Ambient Temperature with
Power Applied.......................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)........................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[2] ............................. −0.5V to VCC + 0.5V
DC Input Voltage[2]........................... −0.5V to VCC + 0.5V
Output Current into Outputs (LOW)......................... 20 mA
Static Discharge Voltage........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................. >200 mA
Storage Temperature ...........................−65°C to +150°C
Ambient Temperature with
Power Applied.......................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)........................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[2] ............................. −0.5V to VCC + 0.5V
DC Input Voltage[2]........................... −0.5V to VCC + 0.5V
Output Current into Outputs (LOW)......................... 20 mA
Static Discharge Voltage........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................. >200 mA
CY7C197D Features
• Pin- and function-compatible with CY7C197B
• High speed
- tAA = 10 ns
• CMOS for optimum speed/power
• Low active power
- ICC = 60 mA @ 10 ns
• Low CMOS standby power
- ISB2 = 3 mA
• TTL-compatible inputs and outputs
• Data retention at 2.0V
• Automatic power-down when deselected
• Available in Pb-Free Packages
• High speed
- tAA = 10 ns
• CMOS for optimum speed/power
• Low active power
- ICC = 60 mA @ 10 ns
• Low CMOS standby power
- ISB2 = 3 mA
• TTL-compatible inputs and outputs
• Data retention at 2.0V
• Automatic power-down when deselected
• Available in Pb-Free Packages
CY7C197D Connection Diagram
CY7C197D
PDF/DataSheet Download
- Datasheet: CY7C197D
- File Size: 262269 KB
- Manufacturer: CYPRESS
- Click here to Download
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