Purchase CY7C197N, In-stock CY7C197N From SeekIC.
MFG:CYPRESS D/C:08+
Part Number: CY7C197N
MFG: CYPRESS
D/C: 08+
Description: The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expan...
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CY7C197N
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DataSheet
General Description
CY7C197N General Description
The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197N has an automatic power-down feature, reducing the power consumption by 75% when deselected.
Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17).
Reading the device is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin.
The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW.The CY7C197N utilizes a die coat to insure alpha immunity.
CY7C197N Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied...........................................55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) ........................................... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................0.5V to VCC + 0.5V
DC Input Voltage[1] .............................. 0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied...........................................55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) ........................................... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ...................................0.5V to VCC + 0.5V
DC Input Voltage[1] .............................. 0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
CY7C197N Features
• High speed
- 25 ns
• CMOS for optimum speed/power
• Low active power
- 880 mW
• Low standby power
- 220 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
- 25 ns
• CMOS for optimum speed/power
• Low active power
- 880 mW
• Low standby power
- 220 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
CY7C197N Connection Diagram
CY7C197N-25PXC
PDF/DataSheet Download
- Datasheet: CY7C197N-25PXC
- File Size: 315346 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
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The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The CY7C197BSee the Truth Table in this data sheet for a complete description of read and write modes.The CY7C197B is availab...
CY7C197
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