CY7C199-35PC General Description
CY7C199-35PC Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) .......................................... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[1] ..................................0.5V to VCC + 0.5V
DC Input Voltage[1]...............................0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
CY7C199-35PC Features
• High speed
-10 ns
• Fast tDOE
• CMOS for optimum speed/power
• Low active power
-467 mW (max, 12 ns "L" version)
• Low standby power
-0.275 mW (max, "L" version)
• 2V data retention ("L" version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
CY7C199-35PC Connection Diagram
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