CY7C199 General Description
CY7C199 Maximum Ratings
(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature ..............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)...........................................0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[1].................................0.5V to VCC + 0.5V
DC Input Voltage[1]..............................0.5V to VCC + 0.5V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
CY7C199 Features
•High speed
-10 ns
•Fast tDOE
•CMOS for optimum speed/power
•Low active power
-467 mW (max, 12 ns "L" version)
•Low standby power
-0.275 mW (max, "L" version)
•2V data retention ("L" version only)
•Easy memory expansion with CE</a>and OE</a> features
•TTL-compatible inputs and outputs
•Automatic power-down when deselected
CY7C199 Connection Diagram
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