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CY7C225A

Features: ` CMOS for optimum speed/power` High speed -18 ns address set-up -12 ns clock to output` Low power -495 mW (commercial) -660 mW (military)` Synchronous and asynchronous output enables` On-chip edge-triggered registers` Buffered common PRESET and CLEAR inputs` EPROM technology, 100% progr...

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SeekIC No. : 004320272 Detail

CY7C225A: Features: ` CMOS for optimum speed/power` High speed -18 ns address set-up -12 ns clock to output` Low power -495 mW (commercial) -660 mW (military)` Synchronous and asynchronous output enables` On-...

CY7C225A Data Sheet

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Part Number:
CY7C225A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` CMOS for optimum speed/power
` High speed
    -18 ns address set-up
    -12 ns clock to output
` Low power
    -495 mW (commercial)
    -660 mW (military)
` Synchronous and asynchronous output enables
` On-chip edge-triggered registers
` Buffered common PRESET and CLEAR inputs
` EPROM technology, 100% programmable
` Slim 300-mil, 24-pin plastic or hermetic DIP, 28-pin LCC, or 28-pin PLCC
` 5V ±10% VCC, commercial and military
` TTL-compatible I/O
` Direct replacement for bipolar PROMs
` Capable of withstanding greater than 2001V static discharge


Pinout

Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ..................................... -65°C to +150°C
Ambient Temperature with
Power Applied.................................................. -55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).................................................-0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State.....................................................-0.5V to +7.0V
DC Input Voltage .................................................-3.0V to +7.0V
DC Program Voltage (Pins 7, 18, 20)............................13.0V
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA


Description

The CY7C225A is a high-performance 512 word by 8 bit electrically programmable read only memory packaged in a slim 300-mil plastic or hermetic DIP, 28-pin leadless chip carrier, and 28-pin PLCC. The memory cells of CY7C225A utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

The CY7C225A replaces bipolar devices and offers the advantages of lower power, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet AC specification limits.




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