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Part Number: CY7C245A

 

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Description: The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a ...


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CY7C245A General Description


The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

The CY7C245A replaces bipolar devices and offers the advantages of lower power, reprogrammability, superior performance and high programming yield. The EPROM cell requires only 12.5V for the supervoltage, and low current requirements allow gang programming. The EPROM cells allow each memory location to be tested 100%, because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet AC specification limits.

The CY7C245A has an asynchronous initialize function (INIT). This function acts as a 2049th 8-bit word loaded into the on-chip register. It is user programmable with any desired word, or may be used as a PRESET or CLEAR function on the outputs. INIT is triggered by a low level, not an edge.

CY7C245A Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ........................−65°C to +150°C
Ambient Temperature with
Power Applied....................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).....................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ........................................−0.5V to +7.0V
DC Input Voltage ....................................−3.0V to +7.0V
DC Program Voltage (Pins 7, 18, 20) .....................13.0V
UV Erasure ............................................7258 Wsec/cm2
Static Discharge Voltage...................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.............................................> 200 mA

CY7C245A Features

• Windowed for reprogrammability
• CMOS for optimum speed/power
• High speed
   - 15-ns address set-up
   - 10-ns clock to output
• Low power
   - 330 mW (commercial) for -25 ns
   - 660 mW (military)
• Programmable synchronous or asynchronous output enable
• On-chip edge-triggered registers
• Programmable asynchronous register (INIT)
• EPROM technology, 100% programmable
• Slim, 300-mil, 24-pin plastic or hermetic DIP
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding greater than 2001V static discharge

CY7C245A Connection Diagram

CY7C245A  Connection Diagram

CY7C245A datasheet

CY7C245A
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