PinoutDescriptionThe CY7C261-25WMB is high-performance 8192-word by 8-bit CMOS PROMs. The CY7C261-25WMB automatically po wers down into a low-power standby mode,while deselected.The CY7C261-25WMBis packaged in a 300-mil-wide package.The reprog rammable package is equipped with an erasure window; w...
CY7C261-25WMB: PinoutDescriptionThe CY7C261-25WMB is high-performance 8192-word by 8-bit CMOS PROMs. The CY7C261-25WMB automatically po wers down into a low-power standby mode,while deselected.The CY7C261-25WMBis ...
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The CY7C261-25WMB is high-performance 8192-word by 8-bit CMOS PROMs. The CY7C261-25WMB automatically po wers down into a low-power standby mode,while deselected. The CY7C261-25WMB is packaged in a 300-mil-wide package.The reprog rammable package is equipped with an erasure window; when exposed to UV light, the PROM is erased and is able to then be reprogrammed.The memory cells of CY7C261-25WMB use proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
Features of the CY7C261-25WMB are:(1) CMOS for optimum speed/power;(2)windowed for reprogrammability;(3)hig h speed:20 ns (commercial),25 ns (Military);(4)low power:660 mW (Commercial),770 mW (Military);(5)super low stan dby power:Less than 220 mW when deselected,fast access is 20 ns;(6)EPROM technology 100% programmable;(7)slim 300-mil or standard 600-mil packaging available;(8) 5V±10% VCC, commercial and military;(9)capable of withsta nding greater than 2001V static discharge.
The absolute maximum ratings of the CY7C261-25WMB can be summarized as:(1):storage temperatures ranges fro m65°C to+150°C;(2):ambient temperature with Power applied is55°C to+125°C;(3):supply voltage to ground potential(Pin 24 to Pin 12) is0.5V to+7.0V;(4):DC voltage applied to outputs in high Z state is0.5V to+7.0V; (5):D C input voltage is3.0V to + 7.0V;(6):DC program voltage(Pin 19 DIP, Pin 23 LCC) is 13.0V;(7):static discharge volta ge is greater than 2001V;(8):latch-Up current is greater than 200 mA;(9):UV exposure is 7258 Wsec/cm2.