CY7C266

The CY7C266 is a high-performance 8192-word by 8-bitCMOS PROM. When deselected, the CY7C266 automaticallypowers down into a low-power standby mode. It is packagedin a 600-mil-wide package. The reprogrammable packagesare equipped with an erasure window; when exposed to UVlight, these PROMs are erased and can then be reprogrammed.The memory cells utilize proven EPROMfloating-gate technology and byte-wide intelligentprogramming algorithms.
The CY7C266 is a plug-in replacement for EPROM devices.The EPROM cell requires only 12.5V for the super voltage andlow-current requirements allow for gang programming. TheEPROM cells allow for each memory location to be tested100%, as each location is written into, erased, and repeatedlyexercised prior to encapsulation. Each PROM is also testedfor AC performance to guarantee that after customerprogramming, the product will meet DC and AC specificationlimits.
Reading of CY7C266 is accomplished by placing an active LOW signal onOE andCE . The contents of the memory location addressedby the address lines (A₀ through A₁₂) will become available onthe output lines (O₀ through O₇).