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MFG:CY Package Cooled:DIP
Part Number: CY7C271A
MFG: CY
Package Cooled: DIP
Description: The CY7C271A is a high-performance 32,768-word by 8-bit CMOS PROM. When disabled (,CE HIGH), the 7C271A
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CY7C271A
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DataSheet
General Description
CY7C271A General Description
The CY7C271A is a high-performance 32,768-word by 8-bit CMOS PROM. When disabled (,CE HIGH), the 7C271A automatically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure
window to provide for reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.
The CY7C271A offers the advantages of lower power, superior performance, and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming, the product will meet DC and AC specification limits.
Reading the 7C271A is accomplished by placing active LOW signals on ,CS1 and ,CE, and an active HIGH on CS2. The contents of the memory location addressed by the address lines (A0A14) will become available on the output lines (O0O7).
CY7C271A Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
DC Program Voltage .................................................... 13.0V
Static Discharge Voltage............................................ >4001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
UV Exposure ................................................ 7258 Wsec/cm2
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
DC Program Voltage .................................................... 13.0V
Static Discharge Voltage............................................ >4001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
UV Exposure ................................................ 7258 Wsec/cm2
CY7C271A Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
-25 ns (Commercial)
• Low power
-275 mW (Commercial)
• Super low standby power
-Less than 85 mW when deselected
• EPROM technology 100%programmable
• Slim 300-mil package
• Direct replacement for bipolar PROMs
• Capable of withstanding >4001V static discharge
• Windowed for reprogrammability
• High speed
-25 ns (Commercial)
• Low power
-275 mW (Commercial)
• Super low standby power
-Less than 85 mW when deselected
• EPROM technology 100%programmable
• Slim 300-mil package
• Direct replacement for bipolar PROMs
• Capable of withstanding >4001V static discharge
CY7C271A Connection Diagram
CY7C271A
PDF/DataSheet Download
- Datasheet: CY7C271A
- File Size: 202289 KB
- Manufacturer: Cypress
- Click here to Download
- ·CY700SMS
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- ·CY74FCT138CTQCT
- TI [Texas Instruments]
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CY7C271A Relative Products
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