CY7C276 General Description
CY7C276 Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. 65°C to+150°C
Ambient Temperature with
Power Applied............................................. 55°C to+125°C
Supply Voltage to Ground Potential ................ 0.5V to+7.0V
DC Voltage Applied to Outputs
in High Z State ................................................ 0.5V to+7.0V
DC Input Voltage............................................ 3.0V to +7.0V
DC Program Voltage.....................................................13.0V
UV Erasure ...................................................7258 Wsec/cm2
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
CY7C276 Features
` 0.8-micron CMOS for optimum speed/power
` High speed (for commercial and military)
-25-ns access time
` 16-bit-wide words
` Three programmable chip selects
` Programmable output enable
` 44-pin PLCC and 44-pin LCC packages
` 100% reprogrammable in windowed packages
` TTL-compatible I/O
` Capable of withstanding greater than 2001V static discharge
CY7C276 Connection Diagram
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