CY7C277-30JC General Description
CY7C277-30JC Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ..................................−65°C to +150°C
Ambient Temperature with
Power Applied..............................................−55°C to +125°C
Supply Voltage to Ground Potential ................−0.5V to +7.0V
(Pin 24 to Pin 12)
DC Voltage Applied to Outputs
in High Z State................................................−0.5V to +7.0V
DC Input Voltage ...........................................−3.0V to +7.0V
DC Program Voltage (Pins 7, 18, 20) ........................... 13.0V
UV Erasure................................................... 7258 Wsec/cm2
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
CY7C277-30JC Features
• Windowed for reprogrammability
• CMOS for optimum speed/power
• High speed
-30-ns address set-up
-15-ns clock to output
• Low power
-60 mW (commercial)
-715 mW (military)
• Programmable address latch enable input
• Programmable synchronous or asynchronous output enable
• On-chip edge-triggered output registers
• EPROM technology, 100% programmable
• Slim 300-mil, 28-pin plastic or hermetic DIP
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding greater than 2001V static discharge
CY7C277-30JC Connection Diagram
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