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Part Number: CY7C277

 

MFG: CYPRESS

 

 

Description: The CY7C277 is a high-performance 32K word by 8-bit CMOS PROMs. It is packaged in the slim 28-pin 300-...


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CY7C277 General Description


The CY7C277 is a high-performance 32K word by 8-bit CMOS PROMs. It is packaged in the slim 28-pin 300-mil package.

The ceramic package may be equipped with an erasure window; when exposed to UV light, the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide algorithms.

The CY7C277 offers the advantages of low power, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be 100% tested, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming.

On the 7C277, the outputs are pipelined through a master- slave register. On the rising edge of CP, data is loaded into the 8-bit edge triggered output register. The E/ES input provides a programmable bit to select between asynchronous and synchronous operation. The default condition is asynchronous.

When the asynchronous mode is selected, the E/ES pin operates as an asynchronous output enable. If the synchronous mode is selected, the E/ES pin is sampled on the rising edge of CP to enable and disable the outputs. The 7C277 also provides a programmable bit to enable the Address Latch input.

If this bit is not programmed, the device will ignore the ALE pin and the address will enter the device asynchronously. If the ALE function is selected, the address enters the PROM while the ALE pin is active, and is captured when ALE is deasserted.

The user may define the polarity of the ALE signal, with the default being active HIGH.

CY7C277 Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ............................−65°C to +150°C
Ambient Temperature with
Power Applied........................................−55°C to +125°C
Supply Voltage to Ground Potential .............−0.5V to +7.0V
(Pin 24 to Pin 12)
DC Voltage Applied to Outputs
in High Z State..............................................−0.5V to +7.0V
DC Input Voltage .........................................−3.0V to +7.0V
DC Program Voltage (Pins 7, 18, 20) ......................... 13.0V
UV Erasure................................................. 7258 Wsec/cm2
Static Discharge Voltage .........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA

CY7C277 Features

• Windowed for reprogrammability
• CMOS for optimum speed/power
• High speed
   -30-ns address set-up
   -15-ns clock to output
• Low power
   -60 mW (commercial)
   -715 mW (military)
• Programmable address latch enable input
• Programmable synchronous or asynchronous output enable
• On-chip edge-triggered output registers
• EPROM technology, 100% programmable
• Slim 300-mil, 28-pin plastic or hermetic DIP
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding greater than 2001V static discharge

CY7C277 Connection Diagram

CY7C277  Connection Diagram

CY7C277 datasheet

CY7C277
PDF/DataSheet Download

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