CY7C281A

Features: • CMOS for optimum speed/power• High speed -25 ns (Commercial)• Low power -495 mW (Commercial)• EPROM technology 100% programmable• Slim 300-mil or standard 600-mil DIP or 28-pin LCC• 5V ±10% VCC, commercial and military• TTL-compatible I/O•...

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CY7C281A Picture
SeekIC No. : 004320295 Detail

CY7C281A: Features: • CMOS for optimum speed/power• High speed -25 ns (Commercial)• Low power -495 mW (Commercial)• EPROM technology 100% programmable• Slim 300-mil or standard 6...

floor Price/Ceiling Price

Part Number:
CY7C281A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

• CMOS for optimum speed/power
• High speed -25 ns (Commercial)
• Low power -495 mW (Commercial)
• EPROM technology 100% programmable
• Slim 300-mil or standard 600-mil DIP or 28-pin LCC
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding >2001V static discharge



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)....................................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ........................................................−0.5V to +7.0V
DC Input Voltage ....................................................−3.0V to +7.0V
DC Program Voltage (Pins 18, 20) ........................................ 13.0V
Static Discharge Voltage..................................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.............................................................. >200 mA



Description

The CY7C281A is a high-performance 1024-word by 8-bit CMOS PROMs. It is packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells of  CY7C281A utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

The CY7C281A is a plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance, and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming, the product will meet DC and AC specification limits.

Reading of  CY7C281A is accomplished by placing an active LOW signal on CS1 and CS2, and active HIGH signals on CS3 and CS4. The contents of the memory location addressed by the address lines (A0−A9) will become available on the output lines (O0−O7).




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