CY7C291A-35WMB

The CY7C291A, CY7C292A, and CY7C293A are high-performance 2K-word by 8-bit CMOS PROMs. The CY7C291A, CY7C292A, and CY7C293A  are functionally identical, but are packaged in 300-mil (7C291A, 7C293A) and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is  erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

The CY7C291A, CY7C292A, and CY7C293A are plug-in replacements for bipolar devices and offer the advantages of lower power, reprogrammability, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits.

A reading  of CY7C291A, CY7C292A, and CY7C293A   are  accomplished by placing an active LOW signal on CS1, and active HIGH signals on CS2 and CS3. The contents of the memory location addressed by the address line (A0 - A10) will become available on the output lines (O0 - O7).