CY7C4205 General Description
CY7C4205 Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .....................................................-65°C to +150°C
Ambient Temperature with
Power Applied.................................................................-55°C to +125°C
Supply Voltage to Ground Potential ...................................-0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State....................................................................-0.5V to +7.0V
DC Input Voltage ...............................................................-3.0V to +7.0V
Output Current into Outputs (LOW)................................................ 20 mA
Static Discharge Voltage .............................................................. >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current......................................................................... >200 mA
CY7C4205 Features
• High-speed, low-power, first-in first-out (FIFO)
memories
• 64 x 18 (CY7C4425)
• 256 x 18 (CY7C4205)
• 512 x 18 (CY7C4215)
• 1K x 18 (CY7C4225)
• 2K x 18 (CY7C4235)
• 4K x 18 (CY7C4245)
• High-speed 100-MHz operation (10 ns read/write cycle
time)
• Low power (ICC =45 mA)
• Fully asynchronous and simultaneous read and write
operation
• Empty, Full, Half Full, and Programmable Almost
Empty/Almost Full status flags
• TTL-compatible
• Retransmit function
• Output Enable (OE) pin
• Independent read and write enable pins
• Center power and ground for reduced noise
• Supports free-running 50% duty cycle clock inputs
• Width Expansion Capability
• Depth Expansion Capability
• Space saving 64-pin 10x10 TQFP, and 14x14 TQFP
• 68-pin PLCC
CY7C4205 Connection Diagram
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