CY7C4211 General Description
CY7C4211 Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...................................65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
CY7C4211 Features
• High-speed, low-power, first-in, first-out (FIFO) memories
• 64 x 9 (CY7C4421)
• 256 x 9 (CY7C4201)
• 512 x 9 (CY7C4211)
• 1K x 9 (CY7C4221)
• 2K x 9 (CY7C4231)
• 4K x 9 (CY7C4241)
• 8K x 9 (CY7C4251)
• High-speed 100-MHz operation (10 ns read/write cycle time)
• Low power (ICC = 35 mA)
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, and Programmable Almost Empty and Almost Full status flags
• TTL-compatible
• Expandable in width
• Output Enable (OE) pin
• Independant read and write enable pins
• Center power and ground pins for reduced noise
• Width Expansion Capability
• Space saving 7mm x 7mm 32-pin TQFP
• 32-pin PLCC
• Pin compatible and functionally equivalent to IDT72421, 72201, 72211, 72221, 72231, 72241
CY7C4211 Connection Diagram
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