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MFG:PLCC  Package Cooled:CYPRESS  

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Part Number: CY7C4211

 

MFG: PLCC

Package Cooled: CYPRESS

 

Description: THe CY7C42X1 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write...


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CY7C4211 General Description


THe CY7C42X1 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. All are 9 bits wide. The CY7C42X1 are pin-compatible to IDT722X1. Programmable features include Almost Full/Almost Empty flags. These FIFOs provide solutions for a wide variety of data buffering needs, including high-speed data acquisition, multiprocessor interfaces, and communications buffering.

These FIFOs have 9-bit input and output ports that are controlled by separate clock and enable signals. The input port is controlled by a free-running clock (WCLK) and two write-enable pins (WEN1, WEN2/LD).

When WEN1 is LOW and WEN2/LD is HIGH, data is written into the FIFO on the rising edge of the WCLK signal. While WEN1, WEN2/LD is held active, data is continually written into the FIFO on each WCLK cycle. The output port is controlled in a similar manner by a free-running read clock (RCLK) and two read-enable pins (REN1, REN2). In addition, the CY7C42X1 has an output enable pin (OE). The read (RCLK) and write (WCLK) clocks may be tied together for single-clock operation or the two clocks may be run independently for asynchronous read/write applications. Clock frequencies up to 100 MHz are achievable.

Depth expansion is possible using one enable input for system control, while the other enable is controlled by expansion logic to direct the flow of data.

CY7C4211 Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...................................65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage............................................ 3.0V to +7.0V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA

CY7C4211 Features

• High-speed, low-power, first-in, first-out (FIFO) memories
• 64 x 9 (CY7C4421)
• 256 x 9 (CY7C4201)
• 512 x 9 (CY7C4211)
• 1K x 9 (CY7C4221)
• 2K x 9 (CY7C4231)
• 4K x 9 (CY7C4241)
• 8K x 9 (CY7C4251)
• High-speed 100-MHz operation (10 ns read/write cycle time)
• Low power (ICC = 35 mA)
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, and Programmable Almost Empty and Almost Full status flags
• TTL-compatible
• Expandable in width
• Output Enable (OE) pin
• Independant read and write enable pins
• Center power and ground pins for reduced noise
• Width Expansion Capability
• Space saving 7mm x 7mm 32-pin TQFP
• 32-pin PLCC
• Pin compatible and functionally equivalent to IDT72421, 72201, 72211, 72221, 72231, 72241

CY7C4211 Connection Diagram

CY7C4211  Connection Diagram

CY7C4211 datasheet

CY7C4211
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