CY7C4255 General Description
CY7C4255 Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...............................65°C to +150°C
Power Applied...........................................55°C to +125°C
Supply Voltage to Ground Potential ............... 0.5V to +7.0V
in High Z State ............................................... 0.5V to +7.0V
DC Input Voltage .........................................-0.5V to Vcc+0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current..................................................... >200 mA
CY7C4255 Features
• High-speed, low-power, first-in first-out (FIFO) memories
• 8K x 18 (CY7C4255)
• 16K x 18 (CY7C4265)
• 0.5 micron CMOS for optimum speed/power
• High-speed 100-MHz operation (10 ns read/write cycle times)
• Low power - ICC=45 mA
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, Half Full, and programmable Almost Empty and Almost Full status flags
• TTL compatible
• Retransmit function
• Output Enable (OE) pins
• Independent read and write enable pins
• Center power and ground pins for reduced noise
• Supports free-running 50% duty cycle clock inputs
• Width Expansion Capability
• Depth Expansion Capability
• 64-pin PLCC and 64-pin TQFP
• Pin-compatible density upgrade to CY7C42X5 family
• Pin-compatible density upgrade to IDT72205/15/25/35/4
CY7C4255 Connection Diagram
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