CY7C4255V General Description
CY7C4255V Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................ 65°C to +150°C
Ambient Temperature with
Power Applied............................................ 55°C to +125°C
Supply Voltage to Ground Potential .........0.5V to VCC+0.5V
DC Voltage Applied to Outputs
in High Z State .........................................0.5V to VCC+0.5V
DC Input Voltage ..........................................−0.5V to VCC+0.5V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage ........................................... >2001V
(per MILSTD883, Method 3015)
Latch-Up Current..................................................... >200 mA
CY7C4255V Features
• 3.3V operation for low power consumption and easy integration into low-voltage systems
• High-speed, low-power, first-in first-out (FIFO) memories
• 8K x 18 (CY7C4255V)
• 16K x 18 (CY7C4265V)
• 32K x 18 (CY7C4275V)
• 64K x 18 (CY7C4285V)
• 0.35 micron CMOS for optimum speed/power
• High-speed 100-MHz operation (10-ns read/write cycle times)
• Low power
-ICC = 30 mA
-ISB = 4 mA
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, Half Full, and programmable Almost Empty and Almost Full status flags
• Retransmit function
• Output Enable (OE) pin
• Independent read and write enable pins
• Supports free-running 50% duty cycle clock inputs
• Width Expansion Capability
• Depth Expansion Capability
• 64-pin 10x10 STQFP
• Pin-compatible density upgrade to CY7C42X5V-ASC families
• Pin-compatible 3.3V solutions for CY7C4255/65/75/85
CY7C4255V Connection Diagram
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All