CZS5064

Breakover Current IBO Max :
Forward Voltage Drop :
Maximum Gate Peak Inverse Voltage :
On-State RMS Current (It RMS) : 0.8 A
Gate Trigger Voltage (Vgt) : 0.8 V
Holding Current (Ih Max) : 5 mA
Gate Trigger Current (Igt) : 200 uA
Packaging : Reel
Mounting Style : SMD/SMT
Package / Case : SOT-223
Rated Repetitive Off-State Voltage VDRM : 400 V
Off-State Leakage Current @ VDRM IDRM : 50 uA


Specifications

	SYMBOL		Units
Peak Repetitive Reverse Voltage	VDRM	400	V
Peak Repetitive Reverse Voltage	VRRM	400	V
RMS On-State Current	IT(RMS)	0.8	V
Average On-State Current (TC=67°C)	IT(AV)	0.51	A
Operating Junction Temperature	TJ	-40 to +125	A
Storage Temperature	Tstg	-40 to +125	°C
Thermal Resistance	QJA	150	°C/W
Thermal Resistance	QJC	25	°C/W

Description

The CENTRAL SEMICONDUCTOR CZS5064 type is an epoxy molded PNPN Silicon Controlled Rectifier manufactured in an epoxy molded surface mount package, designed for control systems and sensing circuit applications.