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CZT2000

Specifications SYMBOL Units Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCES 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C ...

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CZT2000: Specifications SYMBOL Units Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCES 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 A Power...

CZT2000 Data Sheet

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Part Number:
CZT2000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Specifications

  SYMBOL   Units
Collector-Base Voltage VCBO 200  
Collector-Emitter Voltage VCES 200 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 600 A
Power Dissipation PD 2.0 W
Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 62.5 °C/W



Description

The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability.


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