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Specifications SYMBOL Units Collector-Base Voltage VCBO 75 Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C ...

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SeekIC No. : 004320817 Detail

CZT2222A: Specifications SYMBOL Units Collector-Base Voltage VCBO 75 Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power...

CZT2222A Data Sheet

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Part Number:: CZT2222A
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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Specifications SYMBOL Units Collector-Base Voltage VCBO 200 Collector-Emitter ...
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US $.22 - .25 / Piece

Transistors Bipolar (BJT) NPN High Voltage Switching
CZT2907A evaluate
Specifications SYMBOL Units Collector-Base Voltage VCBO 60 V Collector-Emitter ...

Product Details

Description

Specifications

	SYMBOL		Units
Collector-Base Voltage	V_CBO	75
Collector-Emitter Voltage	V_CEO	40	V
Emitter-Base Voltage	V_EBO	6.0	V
Collector Current	I_C	600	mA
Power Dissipation	P_D	2.0	W
Operating and Storage Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	62.5	°C/W

Description

The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications.

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CZT2222A

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