Purchase D2031UK, In-stock D2031UK From SeekIC.
- Table of contents:
D2031UK
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Suppliers
DataSheet
General Description
D2031UK Maximum Ratings
PD Power Dissipation...................................................17.5W
BVDSS Drain- Source Breakdown Voltage* .........................65V
BVGSS Gate- Source Breakdown Voltage * .......................±20V
ID(sat) Drain Current * ...........................................................3A
Tstg Storage Temperature................................. -65 to 150°C
Tj Maximum Operating Junction Temperature........... 200°C
BVDSS Drain- Source Breakdown Voltage* .........................65V
BVGSS Gate- Source Breakdown Voltage * .......................±20V
ID(sat) Drain Current * ...........................................................3A
Tstg Storage Temperature................................. -65 to 150°C
Tj Maximum Operating Junction Temperature........... 200°C
D2031UK Features
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN -10 dB MINIMU
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN -10 dB MINIMU
D2031UK Typical Application
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
D2031UK
PDF/DataSheet Download
- Datasheet: D2031UK
- File Size: 15834 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·D20
- STMicroelectronics
- MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D2 AND C PACKAGING
- 1193253 KB
- ·D2001UK
- SEME-LAB [Seme LAB]
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- ·D2002
- SEME-LAB [Seme LAB]
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- ·D2002UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
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- ·D2003
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- METAL GATE RF SILICON FET
- 61970 KB
- ·D2003UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 61970 KB
- ·D2004UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 53205 KB
- ·D2005
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 15825 KB
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