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DE475-102N21A

Features: * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer- Increased temperature and power cycling capability * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * Low RDS(on) * Very low insertion inducta...

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DE475-102N21A: Features: * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer- Increased temperature and power cycling capability * IXYS advanced low Qg process * Low gate charg...

DE475-102N21A Data Sheet

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Part Number:
DE475-102N21A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

*  Isolated Substrate
    -  high isolation voltage (>2500V)
    -  excellent thermal transfer 
    -  Increased temperature and power cycling capability  
*  IXYS advanced low Qg process
*  Low gate charge and capacitances
    -  easier to drive
    -  faster switching
*  Low RDS(on)
*  Very low insertion inductance (<2nH)
*  No beryllium oxide (BeO) or other haz-ardous materials  
 


Specifications

Symbol
Test
Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 M
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
 Tc = 25°C

Tc = 25°C, pulse width limited by TJM
24
144
A
A
IAR
 Tc = 25°C
21
A
EAR
Tc = 25°C
30
mJ
dv/dt
 IS IDM, di/dt 100A/s,VDDVDSS,
Tj 150°C, RG = 0.2
IS = 0
5

>200
V/ns

V/ns
PDC
PDHS
PDAMB
Tc = 25°C
Derate 3.7W/°C above 25°C
Tc = 25°C
1800
730
4.5
W
W
W
RthJC
RthJHS
  
0.08
0.20
C/W
C/W



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