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DE475-501N44A

Transistors RF MOSFET Power N-Chan RF Pwr Mosfet 500V 44A

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SeekIC No. : 00219524 Detail

DE475-501N44A: Transistors RF MOSFET Power N-Chan RF Pwr Mosfet 500V 44A

DE475-501N44A Data Sheet

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Part Number:
DE475-501N44A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1 MHz to 30 MHz Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 48 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : DE475    

Description

Gain :
Output Power :
Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 20 V
Package / Case : DE475
Frequency : 1 MHz to 30 MHz
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 48 A


Features:

* Isolated Substrate
   - high isolation voltage (>2500V)
   - excellent thermal transfer
   - Increased temperature and power cycling capability  
* IXYS advanced low Qg process
* Low gate charge and capacitances
   - easier to drive
   - faster switching
* Low RDS(on)
* Very low insertion inductance (<2nH)
* No beryllium oxide (BeO) or other haz-ardous materials 


Specifications

Symbol
Test
Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 M
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
 Tc = 25°C

Tc = 25°C, pulse width limited by TJM
44
264
A
A
IAR
 Tc = 25°C
44
A
EAR
Tc = 25°C
30
mJ
dv/dt
 IS IDM, di/dt 100A/s,VDDVDSS,
Tj 150°C, RG = 0.2
IS = 0
5

>200
V/ns

V/ns
PDHS
PDAMB
 Tc = 25C
Derate 4.4W/C above 25C
Tc = 25C
600

4.5
W

W
   TJ
   TJM
   Tstg		  
-55O+150
150
-55O+150


   TL 1.6mm (0.063 in) from case for 10 s
300
Weight
 
3
g



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