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DG2012

Features: Low Voltage Operation (1.8 V to 5.5 V)Low On-Resistance - rDS(on): 1 Typ.Fast Switching - tON : 17 ns, tOFF: 13 nsLow LeakageTTL/CMOS Compatible6-Pin SC-70 PackageApplicationCellular PhonesCommunication SystemsPortable Test EquipmentBattery Operated SystemsSample and Hold CircuitsPinoutS...

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SeekIC No. : 004326040 Detail

DG2012: Features: Low Voltage Operation (1.8 V to 5.5 V)Low On-Resistance - rDS(on): 1 Typ.Fast Switching - tON : 17 ns, tOFF: 13 nsLow LeakageTTL/CMOS Compatible6-Pin SC-70 PackageApplicationCellular Phone...

DG2012 Data Sheet

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Part Number:
DG2012
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rDS(on): 1 Typ.
Fast Switching - tON : 17 ns, tOFF: 13 ns
Low Leakage
TTL/CMOS Compatible
6-Pin SC-70 Package




Application

Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits




Pinout

Connection Diagram




Specifications

Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . .. . . . . . ±100 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . .±300 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . .. . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
MSOP-8c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/above 25




Description

The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 ) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space.

The DG2012 is built on Vishay Siliconix's low voltage submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.






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