DG9461

Features:

Low Voltage Operation (+2.7 to +5 V)
Low On-Resistance - rDS(on): 20
Fast Switching - t_ON : 35 ns, t_OFF: 20 ns
Low Leakage - I _COM(on) : 200-pA max
Low Charge Injection - Q_INJ: 1 pC
Low Power Consumption
TTL/CMOS Compatible
ESD Protection > 2000 V (Method 3015.7)
Available in TSOP-6 and SOIC-8




Application

Battery Operated Systems
Portable Test Equipment
Sample and Hold Circuits
Cellular Phones
Communication Systems
Military Radio
PBX, PABX Guidance and Control Systems




Pinout






Specifications

Reference to GND
V₊ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
IN, COM, NC, NO^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . .±20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . ±40 mA
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . > 2000 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . .. . . . . . . . . -65 to 125°C
Power Dissipation (Packages)^b
6-Pin Narrow Body SO70^c . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 400 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/ above 75




Description

Low-Voltage Single SPDT Analog Switch

The DG9461 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (t_ON: 35 ns, t_OFF: 20 ns), low on-resistance (r_DS(on): 20) and small physical size (TSOP-6), the DG9431 is ideal for portable and battery powered applications requiring high performance and efficient use of board space.

The DG9461 is built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9461.