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DIM100PHM33-A000

Features: ` 10s Short Circuit Withstand` High Thermal Cycling Capability` Non Punch Through Silicon` Isolated MMC Base with AlN SubstratesApplication· High Reliability Inverters· Motor Controllers· Traction AuxiliariesSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may c...

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DIM100PHM33-A000: Features: ` 10s Short Circuit Withstand` High Thermal Cycling Capability` Non Punch Through Silicon` Isolated MMC Base with AlN SubstratesApplication· High Reliability Inverters· Motor Controllers· ...

DIM100PHM33-A000 Data Sheet

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Part Number:
DIM100PHM33-A000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

` 10s Short Circuit Withstand
` High Thermal Cycling Capability
` Non Punch Through Silicon
` Isolated MMC Base with AlN Substrates


Application

· High Reliability Inverters
· Motor Controllers
· Traction Auxiliaries


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
3300
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase = 85˚C
100
A
IC(PK) Peak collector current 1ms, Tcase = 115˚C
200
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1304
kW
I2t Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C
5
kA2S
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
10
PC



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.

The DIM100PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for applications requiring high thermal cycling capability.

The module  DIM100PHM33-A000incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.




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