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DIM1200DDM17-E000

Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Short Circuit Withstand` Isolated MMC Base with AlN Substrates` High Thermal Cycling CapabilityApplication` High Reliability Inverters - Wind Turbines - Motor Controllers - UPS Systems` Traction - Propu...

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DIM1200DDM17-E000: Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Short Circuit Withstand` Isolated MMC Base with AlN Substrates` High Thermal Cycling CapabilityApplica...

DIM1200DDM17-E000 Data Sheet

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Part Number:
DIM1200DDM17-E000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

` Trench Gate Field Stop Technology
` Low Conduction Losses
` Low Switching Losses
` 10s Short Circuit Withstand
` Isolated MMC Base with AlN Substrates
` High Thermal Cycling Capability


Application

` High Reliability Inverters
   - Wind Turbines
   - Motor Controllers
   - UPS Systems
` Traction
   - Propulsion Drives
   - Auxiliaries


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
1700
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase = 75˚C
1200
A
IC(PK) Peak collector current 1ms, Tcase = 110˚C
2400
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
6.94
kW
I2t Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C
200
kA2S
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
QPD Partial discharge - per module IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
10
PC



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.

The DIM1200DDM17-E000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for applications requiring high thermal cycling capability.

The module DIM1200DDM17-E000 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.




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