Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current GainSpecifications Characteristic Symbol DMBT9022 Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5.0 V Coll...
DMBT9022: Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current GainSpecifications Characteristic Symbol DMBT9022 Unit Collector-Base Voltage ...
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*Epitaxial Planar Die Construction
*Ideal for Medium Power Amplification and Switching
*High Current Gain
| Characteristic | Symbol | DMBT9022 | Unit |
| Collector-Base Voltage | VCBO | 50 | V |
| Collector-Emitter Voltage | VCEO | 40 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current - Continuous (Note 1) | IC | 100 | mA |
| Power Dissipation (Note 1) | Pd | 225 | mW |
| Thermal Resistance, Junction to Ambient (Note 1) | RJA | 556 | K/W |
| Operating and Storage and Temperature Range | Tj,TSTG | -55 to +150 |