Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current Gain*Complement to DMBT9022Specifications Characteristic Symbol DMBT9022 Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Volt...
DMBT9922: Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current Gain*Complement to DMBT9022Specifications Characteristic Symbol DMBT9022 Unit ...
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Characteristic | Symbol | DMBT9022 | Unit |
Collector-Base Voltage | VCBO | -50 | V |
Collector-Emitter Voltage | VCEO | -40 | V |
Emitter-Base Voltage | VEBO | -5.0 | V |
Collector Current - Continuous (Note 1) | IC | -100 | mA |
Power Dissipation (Note 1) | Pd | 225 | mW |
Thermal Resistance, Junction to Ambient (Note 1) | RJA | 556 | K/W |
Operating and Storage and Temperature Range | Tj,TSTG | -55 to +150 |