Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current Gain*Complement to DMBT9022Specifications Characteristic Symbol DMBT9022 Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Volt...
DMBT9922: Features: *Epitaxial Planar Die Construction*Ideal for Medium Power Amplification and Switching*High Current Gain*Complement to DMBT9022Specifications Characteristic Symbol DMBT9022 Unit ...
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| Characteristic | Symbol | DMBT9022 | Unit |
| Collector-Base Voltage | VCBO | -50 | V |
| Collector-Emitter Voltage | VCEO | -40 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous (Note 1) | IC | -100 | mA |
| Power Dissipation (Note 1) | Pd | 225 | mW |
| Thermal Resistance, Junction to Ambient (Note 1) | RJA | 556 | K/W |
| Operating and Storage and Temperature Range | Tj,TSTG | -55 to +150 |