DMN100-7

MOSFET N-CH 30V 1.1A SC59-3

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DMN100-7 Picture
SeekIC No. : 003430891 Detail

DMN100-7: MOSFET N-CH 30V 1.1A SC59-3

floor Price/Ceiling Price

Part Number:
DMN100-7
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Series: - Manufacturer: Diodes Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) @ Vgs: 5.5nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 150pF @ 10V
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Feature: Standard
Power - Max: 500mW
Current - Continuous Drain (Id) @ 25° C: 1.1A
Packaging: Cut Tape (CT)
Manufacturer: Diodes Inc
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SC-59-3
Input Capacitance (Ciss) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1A, 10V
Gate Charge (Qg) @ Vgs: 5.5nC @ 10V


Parameters:

Technical/Catalog InformationDMN100-7
VendorDiodes Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.1A
Rds On (Max) @ Id, Vgs240 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 10V
Power - Max500mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs5.5nC @ 10V
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DMN100 7
DMN1007
DMN100DICT ND
DMN100DICTND
DMN100DICT



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