DMN2100UDM-7, US $ .17-.31 , Diodes Inc., DMN2100UDM-7 DataSheet download, circuit diagram from SeekIC.com

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DMN2100UDM-7: MOSFET 900mW 20Vdss

DMN2100UDM-7 Data Sheet

US $ .17~.31 / Piece | Get Latest Price

Part Number:: DMN2100UDM-7
Mfg:: Diodes Inc.
Supply Ability:: 5000

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US $.16 - .35 / Piece

MOSFET Dual N-Channel

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	3.3 A
Resistance Drain-Source RDS (on) :	55 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-26	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 55 mOhms at 4.5 V
Package / Case : SOT-26

Parameters:

Technical/Catalog Information	DMN2100UDM-7
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.3A
Rds On (Max) @ Id, Vgs	55 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	555pF @ 10V
Power - Max	900mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-26
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	DMN2100UDM 7 DMN2100UDM7 DMN2100UDMDIDKR ND DMN2100UDMDIDKRND DMN2100UDMDIDKR

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DMN2100UDM-7

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