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DMN3200U-7

MOSFET 650mW 30Vdss

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SeekIC No. : 00153762 Detail

DMN3200U-7: MOSFET 650mW 30Vdss

DMN3200U-7 Data Sheet

floor Price/Ceiling Price

US $ .17~.31 / Piece | Get Latest Price
Part Number:
DMN3200U-7
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.31
  • $.26
  • $.19
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationDMN3200U-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs90 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds 290pF @ 10V
Power - Max650mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names DMN3200U 7
DMN3200U7



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