PinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -5 A Collector dissipation PC 0.5 ...
DP500F: PinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage ...
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Characteristic |
Symbol |
Ratings |
Unit |
Collector-Base voltage |
VCBO |
-15 |
V |
Collector-Emitter voltage |
VCEO |
-12 |
V |
Emitter-Base voltage |
VEBO |
-5 |
V |
Collector current |
IC |
-5 |
A |
Collector dissipation |
PC |
0.5 |
W |
PC |
2 | ||
Junction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-55~150 |
The DP500F features:
Extremely low collector-to-emitter saturation voltage ( V CE(SAT) =-0.2V Typ. @IC /IB =-3A/-150mA)
Suitable for low voltage large current drivers
Excellent hFE Linearity
Complementary pair with DN500F
Bipolar transistors DP500F, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), DP500F are called bipolar because they have two kinds of carriers (hole, electron)