DS1230W

Features: 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns Lithium energy source is ele...

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SeekIC No. : 004328448 Detail

DS1230W: Features: 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited wr...

floor Price/Ceiling Price

Part Number:
DS1230W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

 10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
    - Directly surface-mountable module
    - Replaceable snap-on PowerCap provides lithium backup battery
    - Standardized pinout for all nonvolatile SRAM products
    - Detachment feature on PowerCap allows easy removal using a regular screwdriver



Pinout

  Connection Diagram


Specifications

Voltage on Any Pin Relative to Ground                              -0.3V to +4.6V
Operating Temperature                                                     0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature                                                        -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature                                                      260°C for 10 seconds



Description

The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM Module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.




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