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MFG:DALLAS D/C:DIP
Part Number: DS1230Y
MFG: DALLAS
D/C: DIP
Description: The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits....
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DS1230Y
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Suppliers
DataSheet
General Description
DS1230Y General Description
The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
DS1230Y Maximum Ratings
Voltage on Any Pin Relative to Ground -0.3V to +7.0V
Operating Temperature 0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 seconds
Operating Temperature 0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 seconds
DS1230Y Features
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM,EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range (DS1230AB)
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM,EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range (DS1230AB)
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
DS1230Y Connection Diagram
DS1230Y
PDF/DataSheet Download
- Datasheet: DS1230Y
- File Size: 155648 KB
- Manufacturer: MAXIM
- Click here to Download
- ·DS1
- Linear
- LTC2400 High Accuracy Differential to Single-Ended Converter for ±5V Supplies
- 68288 KB
- ·DS1000
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-100
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-125
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-150
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-175
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-20
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
- ·DS1000-200
- DALLAS [Dallas Semiconducotr]
- 5-Tap Silicon Delay Line
- 67189 KB
DS1230Y Relative Products
DS1230WP-150-IND
The DS1230WP-150-IND is one member of the DS1230WP family which is designed as the 262,144-bit, fully static, nonvolatile SRAM that can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. Also thi...
DS1230WP-150+
IC SRAM NV 256K 3.3V 150NS 34PCM
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DS1230WP-150
IC SRAM NV 256K 3.3V 150NS 34PCM
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DS1230WP-100IND+
IC SRAM NV 256K 3.3V 100NS 34PCM
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DS1230WP-100+
IC SRAM NV 256K 3.3V 100NS 34PCM
DS1230W-150+
IC SRAM NV 256K 3.3V 150NS 28DIP
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