Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 512k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write cyclesLow-power CMOSRead and write access times as fast as 150 nsLithium energy source is electrica...
DS1250W: Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 512k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write...
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10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 512k x 8 volatile static RAM,EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 150 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Optional industrial temperature range of -40°C to +85°C, designated IND
JEDEC standard 32-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PCM allows easy removal using a regular screwdriver
Voltage on Any Pin Relative to Ground -0.3V to +4.6V
Operating Temperature 0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
The DS1250W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512kx 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.