DS1250W

Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 512k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write cyclesLow-power CMOSRead and write access times as fast as 150 nsLithium energy source is electrica...

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SeekIC No. : 004328481 Detail

DS1250W: Features: 10 years minimum data retention in the absence of external powerData is automatically protected during power lossReplaces 512k x 8 volatile static RAM,EEPROM or Flash memoryUnlimited write...

floor Price/Ceiling Price

Part Number:
DS1250W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

 10 years minimum data retention in the absence of external power
 Data is automatically protected during power loss
 Replaces 512k x 8 volatile static RAM,EEPROM or Flash memory
 Unlimited write cycles
 Low-power CMOS
 Read and write access times as fast as 150 ns
 Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
 Optional industrial temperature range of -40°C to +85°C, designated IND
 JEDEC standard 32-pin DIP package
 New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PCM allows easy removal using a regular screwdriver




Pinout

  Connection Diagram




Specifications

Voltage on Any Pin Relative to Ground                                                 -0.3V to +4.6V
Operating Temperature                      0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature                    -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature                                                            260°C for 10 seconds

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.




Description

The DS1250W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250W devices can be used in place of existing 512kx 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1250W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.




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