DS1250Y

Features: 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 70 ns Lithium energy source is ele...

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SeekIC No. : 004328482 Detail

DS1250Y: Features: 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,EEPROM or Flash memory Unlimited w...

floor Price/Ceiling Price

Part Number:
DS1250Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

  10 years minimum data retention in the absence of external power
  Data is automatically protected during power loss
  Replaces 512k x 8 volatile static RAM,EEPROM or Flash memory
  Unlimited write cycles
  Low-power CMOS
  Read and write access times as fast as 70 ns
  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  Full ±10% VCC operating range (DS1250Y)
 Optional ±5% VCC operating range (DS1250AB)
  Optional industrial temperature range of -40°C to +85°C, designated IND
  JEDEC standard 32-pin DIP package
  New PowerCap Module (PCM) package
     -  Directly surface-mountable module
     -  Replaceable snap-on PowerCap provides lithium backup battery
     -  Standardized pinout for all nonvolatile  SRAM products
     -  Detachment feature on PCM allows easy
     removal using a regular screwdriver




Pinout




Specifications

Voltage on Any Pin Relative to Ground  -0.3V to +7.0V
Operating Temperature  0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature  -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature  260°C for 10 seconds



Description

The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM DS1250 has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. DS1250 devices in thePowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.


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