DS1258W-150

Packaging :
Interface Type : Parallel
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3 V
Access Time : 150 ns
Memory Size : 2 Mbit
Data Bus Width : 16 bit
Operating Current : 100 mA
Organization : 128 K x 16
Package / Case : PDIP-40


Description

The DS1258W-150 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. The feature of DS1258W-150 are as follows: (1)10 years minimum data retention in the absence of external power; (2)data is automatically protected during power loss; (3)unlimited write cycles; (4)low-power CMOS; (5)read and write access times as fast as 100ns; (6)lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (7)optional industrial temperature range of -40 to +85.

The absolute maximum ratings of the DS1258W-150 are: (1)voltage on any pin relative to ground: -0.3V to +4.6V; (2)operating temperature range: 0°C to 70°C (-40°C to +85°C for IND parts); (3)storage temperature range: -40°C to +70°C (-40°C to +85°C for IND parts); (4)soldering temperature: See IPC/JEDEC J-STD-020A Specification.

The following is about the electrical characteristics of DS1258W-150: (1)input leakage current: -2.0A min and +2.0 A max; (2)I/O leakage current CE VIH VCC: -1.0A min and +1.0 A max; (3)output current at 2.2V: -1.0 mA min; (4)output current at 0.4V: 2.0 mA min; (5)standby current CE = 2.2V: 100A typical and 450A max; (6)standby current CE = VCC - 0.2V: 60A typical and 250A max; (7)operating current: 100 mA max; (8)write protection voltage: 2.8V min, 2.9V typical and 3.0 V max.