DS1258W

Features: 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte Chip Select Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 100ns Lithium Energy Source is Electrical...

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SeekIC No. : 004328491 Detail

DS1258W: Features: 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte Chip Select Inputs Unlimited Write Cy...

floor Price/Ceiling Price

Part Number:
DS1258W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

 10-Year Minimum Data Retention in the Absence of External Power
  Data is Automatically Protected During a Power Loss
  Separate Upper Byte and Lower Byte Chip Select Inputs
  Unlimited Write Cycles
 Low-Power CMOS
  Read and Write Access Times as Fast as 100ns
  Lithium Energy Source is Electrically Disconnected to Retain Freshness Until
     Power is Applied for the First Time
 Optional Industrial Temperature Range of -40C to +85C, Designated IND



Pinout

  Connection Diagram


Specifications

Voltage on Any Pin Relative to Ground                                                                   -0.3V to +4.6V
Operating Temperature Range                         0°C to 70°C, -40 to +85 for Industrial Parts
Storage Temperature Range                       -40°C to +70°C, -40 to +85 for Industrial Parts
Soldering Temperature                                                   See IPC/JEDEC J-STD-020A Specification



Description

The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing




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