DS1258Y

10-Year Minimum Data Retention in the Absence of External Power
Data is Automatically Protected During a Power Loss
Separate Upper Byte and Lower Byte Chip- Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
Full ±10% Operating Range (DS1258Y)
Optional ±5% Operating Range (DS1258AB)
Optional Industrial Temperature Range of -40 to +85, Designated IND

Voltage on Any Pin Relative to Ground -0.3V to +6.0V
Operating Temperature Range 0°C to +70°C, -40 to +85 for Industrial Parts
Storage Temperature Range -40°C to +70°C, -40 to +85 for Industrial Parts
Soldering Temperature See IPC/JEDEC J-STD-020A Specification

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM DS1258 has a self-contained lithium energy source and control circuitry that constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.