DS1270Y

Features:

5 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCC operating range (DS1270Y)
Optional ±5% VCC operating range (DS1270AB)
Optional industrial temperature range of  -40°C to +85°C, designated IND

Pinout




Specifications

Voltage on Any Pin Relative to Ground     -0.3V to +6.0V
Operating Temperature         0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature           -40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature         260°C for 10 seconds 
 


Description

The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM DS1270 has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.