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DS1640C

Features: Contains four P channel power FET switches that can each supply over 300 mA @ 0.2 volts drop Controlled directly from CMOS or TTL level signals Fast switching time of less than 10 µs at rated supply current 16-pin DIP or 16-pin SOIC surface mount package Positive logic signal turns...

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SeekIC No. : 004328609 Detail

DS1640C: Features: Contains four P channel power FET switches that can each supply over 300 mA @ 0.2 volts drop Controlled directly from CMOS or TTL level signals Fast switching time of less than 10 µs...

DS1640C Data Sheet

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Part Number:
DS1640C
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

 Contains four P channel power FET switches that can each supply over 300 mA @ 0.2 volts drop
Controlled directly from CMOS or TTL level signals
Fast switching time of less than 10 µs at rated supply current
16-pin DIP or 16-pin SOIC surface mount package
Positive logic signal turns each FET on and ground or low level signal turns each FET off
Off condition allows less than 50 nA of current flow
Low control gate capacitance of less than 5 pF
FET gates can either follow inputs or be latched
Designed for use with power supplies ranging from +3 to +5 volts


Pinout

Connection Diagram


Specifications

Voltage on Any Pin Relative to Ground                            -0.3V to +7.0V
Operating Temperature                                                   0°C to 70°C
Storage Temperature                                                      -55°C to +125°C
Soldering Temperature                                                    260°C for 10 seconds


Description

The DS1640 contains four P channel power MOS FETs designed as switches to conserve power in personal computer systems. When connected to power management control units, power consuming devices like disk drives or display panel backlights can be routinely shut down to conserve battery or main power supply energy. The P channel power MOS FETs are individually controlled and are capable of handling 300 mA each continuously with less than 0.2 volts drop from input to output. The device DS1640 requires a +3 Û +5 volt power supply input which is used to power internal logic and to operate a gate bias generator.




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