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Part Number: DS9667
Description: The DS2003/DS9667/DS2004 are comprised of seven highvoltage, high current NPN Darlington transistor pairs. Allunits ...
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DS9667
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DataSheet
General Description
DS9667 General Description
The DS2003/DS9667/DS2004 are comprised of seven highvoltage, high current NPN Darlington transistor pairs. Allunits feature common emitter, open collector outputs. Tomaximize their effectiveness, these units contain suppres-sion diodes for inductive loads and appropriate emitter baseresistors for leakage.
The DS2003/DS9667 has a series base resistor to eachDarlington pair, thus allowing operation directly with TTL orCMOS operating at supply voltages of 5.0V.The DS2004 has an appropriate input resistor to allow directoperation from CMOS or PMOS outputs operating from sup-ply voltages of 6.0V to 15V.
The DS2003/DS9667/DS2004 offer solutions to a greatmany interface needs, including solenoids, relays, lamps,small motors, and LEDs. Applications requiring sink currentsbeyond the capability of a single output may be accommo-dated by paralleling the outputs.
DS9667 Maximum Ratings
Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature Range
Ceramic DIP ...............................-65to 175
Molded DIP..................................-65to 150
Operating Temperature Range
DS2003M/DS9667M ........... ........-55to125
DS2004M....................................-55to 125
DS2003T/DS9667T......................-40to105
DS2004T....................................-40to 105
b40§Cto a105§C........................... 0to 85
DS2003C/DS9667C...........................0to 85
DS2004C......................................... 0to 85
Lead Temperature
Ceramic DIP (Soldering, 60 seconds) .........300
Molded DIP (Soldering, 10 seconds) ..... ...v265
Maximum Power Dissipation* at 25
Cavity Package .....................................2016 mW
Molded Package ....................................1838 mW
S.O. Package ...........................................926 mW
Derate cavity package 16.13 mW/§C above 25; derate molded DIP pack-
age 14.7 mW/ above 25. Derate S.O. package 7.4 mW/.
nput Voltage ................................................. .30V
Output Voltage ...............................................55V
Emitter-Base Voltage.................................... 6.0V
Continuous Collector Current ....................500 mA
Continuous Base Current............................ 25 mA
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature Range
Ceramic DIP ...............................-65to 175
Molded DIP..................................-65to 150
Operating Temperature Range
DS2003M/DS9667M ........... ........-55to125
DS2004M....................................-55to 125
DS2003T/DS9667T......................-40to105
DS2004T....................................-40to 105
b40§Cto a105§C........................... 0to 85
DS2003C/DS9667C...........................0to 85
DS2004C......................................... 0to 85
Lead Temperature
Ceramic DIP (Soldering, 60 seconds) .........300
Molded DIP (Soldering, 10 seconds) ..... ...v265
Maximum Power Dissipation* at 25
Cavity Package .....................................2016 mW
Molded Package ....................................1838 mW
S.O. Package ...........................................926 mW
Derate cavity package 16.13 mW/§C above 25; derate molded DIP pack-
age 14.7 mW/ above 25. Derate S.O. package 7.4 mW/.
nput Voltage ................................................. .30V
Output Voltage ...............................................55V
Emitter-Base Voltage.................................... 6.0V
Continuous Collector Current ....................500 mA
Continuous Base Current............................ 25 mA
DS9667 Features
Seven high gain Darlington pairs
High output voltage (VCE e 50V)
High output current (IC e 350 mA)
TTL, PMOS, CMOS compatible
Suppression diodes for inductive loads
Extended temperature range
High output voltage (VCE e 50V)
High output current (IC e 350 mA)
TTL, PMOS, CMOS compatible
Suppression diodes for inductive loads
Extended temperature range
DS9667 Connection Diagram
DS9667
PDF/DataSheet Download
- Datasheet: DS9667
- File Size: 151479 KB
- Manufacturer: NSC [National Semiconductor]
- Click here to Download
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